Embedded DRAM

Even though the word DRAM has been quite common among us for many decades, the development in the field of DRAM was very slow. The storage medium reached the present state of semiconductor after a long scientific research. Once the semiconductor storage medium was well accepted by all, plans were put forward to integrate the logic circuits associated with the DRAM along with the DRAM itself. However, technological complexities and economic justification for such a complex integrated circuit are difficult hurdles to overcome. Although scientific breakthroughs are numerous in the commodity DRAM industry, similar techniques are not always appropriate when highperformance logic circuits are included on the same substrate. Hence, eDRAM pioneers have begun to develop numerous integration schemes.

This seemingly subtle semantic difference significantly impacts mask count, system performance, peripheral circuit complexity, and total memory capacity of eDRAM products. Furthermore, corporations With aggressive commodity DRAM technology do not have expertise in the design of complicated digital functions and are not able to assemble a design team to
complete the task of a truly merged DRAM-logic product. Conversely, small application specific integrated circuit (ASIC) design corporations, unfamiliar with DRAM- specific elements and design practice, cannot carry out an efficient merged logic design and therefore mar the beauty of the original intent to integrate. Clearly, the reuse of process technology is an enabling lhetor en route to cost-effective eDRAM technology. By the same. account, modern circuit designers should be familiar with the new elements of eDRAM technology so that they can efficiently reuse DRAM-specific structures and elements in other digital functions. The reuse of additional electrical elements is a methodology that will make eDRAM more than just a memory’ interconnected to a few million Boolean gates.